fto - 4n 47 u single channel optocouplers fto - 4n 48 u (direct replacement s for 4n47u/4n48u/4n49u) fto - 4n 49 u features: high reliability base lead provided rugged package stability over wide temperature +1000v electrical isolation applications: eliminate ground loops level shifting line receiver switching power supplies motor control description the fto - 47u to 49u contains a gallium aluminum arsenide led optically coupled to a silicon planar phototransistor. the optocoupler is built in a 6pin leadless chip carrier. this optocoupler is capable of transmitting signals bet ween two galvanic sources. the potential difference between transmitter and receiver should not go over the maximum isolation voltage. absolute maximum ratings input to output voltage ................................ ................................ ................................ ................................ .... + 1kv emitter - base voltage ................................ ................................ ................................ ................................ .......... 7v collector - emitter voltage (value applies t o emitter - base open - circuited & the input - diode equal to zero) ................. 40v collector - base voltage ................................ ................................ ................................ ................................ ...... 45v reverse input voltage ................................ ................................ ................................ ................................ ........ 2v input diode continuous forward current at (or below) 65c free - air temperature (see note 1) .......................... 40ma peak forward input current (value app lies for tw 1 m s, prr < 300 pps) ................................ ............................... 1a continuous collector current ................................ ................................ ................................ ........................... 50ma continuous transistor power dissipation at (or below) 25 c free - air temperature (see note 2) ....................... 300mw storage temperature ................................ ................................ ................................ ..................... - 65c to +125c operating free - air temperature range ................................ ................................ ............................ - 55c to +1 25c lead solder temperature (10 seconds max.) ................................ ................................ ................................ .. 240c notes: 1. derate linearly to 125c free - air temperature at the rate of 0.67 mw/c above 65c. 2. derate linearly to 125c free - air temperature at the rate of 3 mw/c. recommended operating conditions: para meter symbol min max unit input current, low level i fl 0 90 m a input current, high level i fh 2 10 ma supply voltage v ce 5 10 v operating temperature t a - 55 125 c selection guide part number part description fto - 4n47u - 001 single channel optocoupler ( - 55 to +125c operating temperature range) fto - 4n47u - 101 single channel optocoupler, with tx processing ( - 55 to +125c operating range) fto - 4n48u - 001 optocoupler, tx screening level fto - 4n48u - 101 single channel optocoupler, with tx processing ( - 55 t o +125c operating range fto - 4n49u - 001 optocoupler, commercial ( - 55 to 125 c operating range) fto - 4n49u - 101 single channel optocoupler, with tx processing ( - 55 to +125c operating range www.forcetechnologies .co.uk
fto - 4n 47 u , fto - 4n 48 u & fto - 4n 49 u single channel optocoupler electrical characteristics input diode t a = 25 c unless otherwise specified. parameter symbol min max unit test conditions input diode static reverse current i r 100 a v r = 2v input diode static forward voltage - 55 c v f 1.0 1.7 v i f = 10ma input diode static forward voltage +25 c v f 0.8 1.5 v i f = 10ma input diode static forward voltage +125 c v f 0.7 1.3 v i f = 10ma output transistor t a = 25 c unless otherwise specified. parameter symbol min max un it test conditions collector - base breakdown voltage v (br)cbo 45 v i c = 100 m a, i b = 0, i f = 0 collector - emitter breakdown voltage v ( br ) ceo 40 v i c = 1ma, i b = 0, i f = 0 emitter - base breakdown voltage v (br)ebo 7 v i c = 0ma, i e = 100 m a, i f = 0 off - stat e collector current +25 c +125 c i c(off) i c(off) 100 100 na m a v ce = 20v, i f = 0ma, i b = 0 v ce = 20v, i f = 0ma, i b = 0 coupled characteristics t a = 25 c unless otherwise specified. parameter symbol min max unit test conditions on state collector current fto - 4n47u fto - 4n48u fto - 4n49u i c(on) 0.5 1 2.0 5 10 ma v ce = 5v, i f = 1ma on state collector current +125 c fto - 4n47u fto - 4n48u fto - 4n49u i c(on) 0.5 1.0 2.0 ma v ce = 5v, i f = 2ma on state collector current - 55 c fto - 4n47u fto - 4n48u fto - 4n49u i c(on) 0.7 1.4 2.8 ma v ce = 5v, i f = 2ma collector - emitter saturation volt fto - 4n 47u fto - 4n48u fto - 4n49u v ce(sat) 0.3 v i f = 2ma, i c = 0.5ma, i b = 0 i f = 2ma, i c = 1ma, i b = 0 i f = 2ma, i c = 2ma, i b = 0 input to output internal resistance r io 10 11 w v in - out = 1kv, note 1 input to output capacitance c io 5 pf f = 1mhz, v in - out = 1kv rise \ fall time - phototransistor t r /t f 20 m s v cc =10v, i f =5ma, r l =100 w , i b =0 rise/fall time - photodiode t f /t f 0.85 m s v cc =10v, i f =5ma, r l =100 w , i e =0 notes: 1. measured between all phototransistor leads shorted together and with both input diode leads shorted together.
package dimensions schematic diagram
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